| PART |
Description |
Maker |
| HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life
256Mbit (64Mx4) DDR266A (2-3-3) ？的256Mbit4Mx4）DDR266A-3-3）？
|
Infineon Technologies AG
|
| K4J55323QF-GC15 K4J55323QF-GC14 K4J55323QF-GC16 K4 |
256Mbit GDDR3 SDRAM
|
Samsung Electronic
|
| K4N56163QF-GC25 K4N56163QF-GC30 K4N56163QF-GC37 |
256Mbit gDDR2 SDRAM
|
Samsung Electronic
|
| HY5S5B6GLF-6 HY5S5B6GLF-6E HY5S5B6GLF-H HY5S5B6GLF |
256Mbit (16Mx16bit) Mobile SDR Memory
|
Hynix Semiconductor
|
| IS43R16160D-6TL IS43R16160D-6TLI IS46R16160D-6TLA1 |
8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM
|
Integrated Silicon Solution, Inc
|
| H55S2562JFR-60M H55S2562JFR-75M H55S2562JFR-A3M |
256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M368L3223BT1 |
32Mx64 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| HSD32M64D8H-80 HSD32M64D8H-75 HSD32M64D8H-10 HSD32 |
Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HSD64M64F8KA HSD64M64F8KA-10 HSD64M64F8KA-10L HSD6 |
Synchronous DRAM Module 512Mbyte (64Mx64bit), SMM, based on 32Mx8 ,4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HMD32M64D8A-10 HMD32M64D8A-10L HMD32M64D8A-12 HMD3 |
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
Hanbit Electronics Co.,...
|
