| PART |
Description |
Maker |
| K7J641882M K7J643682M K7J641882M-FC16 K7J641882M-F |
72Mb M-die DDRII SRAM Specification 72Mb的M -模条DDRII规格的SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
| GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
| GS8640ZV18T-167I GS8640ZV36GT-167I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 8 ns, PQFP100
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8662Q18GE-250I GS8662Q18E-250I GS8662Q36E-200 GS |
72Mb SigmaQuad-II Burst of 2 SRAM 4M X 18 STANDARD SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 2 SRAM 2M X 36 STANDARD SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 2 SRAM 8M X 8 STANDARD SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 2 SRAM 8M X 8 STANDARD SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| R1Q4A3618BBG-33R R1Q4A3636BBG-33R R1Q4A3618BBG-40R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| K7I163682B06 K7I161882B |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| UPD44324082F5-E40-EQ2 UPD44324082F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| K7I161882B |
(K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
|
Samsung semiconductor
|
