| PART |
Description |
Maker |
| 4N90L-TN3-R 4N90G-TN3-R 4N90G-TA3-T 4N90G-TF3-T 4N |
4 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 11N90 11N90L-TF1-T 11N90G-TF1-T 11N90G-TA3-T 11N90 |
11 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 10N90L-TF1-T 10N90G-TF1-T 10N90G-TA3-T 10N90L-TA3- |
10 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTD23N03R NTD23N03R-1 NTD23N03R-1G NTD23N03RG NTD2 |
Power MOSFET 23A, 25V, N-Channel DPAK
23 Amps / 25 Volts / N-Channel DPAK
23 Amps, 25 Volts, N−Channel DPAK
23 Amps, 25 Volts, N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| SDR529SMS SDR526 SDR526SMS SDR527 SDR527SMS SDR528 |
3 AMPS 600 - 900 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, I...
SSDI[Solid States Devices, Inc]
|
| MGSF2N02E MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 |
2.8 Amps, 20 Volts, N−Channel SOT−23 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB
2.8 Amps, 20 Volts, N-Channel SOT-23
2.8 Amps, 20 Volts, N−Channel SOT−23
Power MOSFET 2.8 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
| 9N90 |
900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTD3055L170-1 NTD3055L170-1G NTD3055L170T4G NTD305 |
Power MOSFET 9.0 Amps, 60 Volts, Logic Level N-Channel DPAK
9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTB45N06LT4 NTB45N06LT4G NTP45N06L NTB45N06L NTB45 |
Power MOSFET 45 Amps, 60 Volts, Logic Level
45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| MTD3055VL1 MTD3055VLT4 MTD3055VL MTD3055VL-D |
Power MOSFET 12 Amps, 60 Volts 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTMS10P02R2 NTMS10P02 |
Power MOSFET -10 Amps, -20 Volts N-Channel Enhancement Mode Single SO-8 Package(-10A, -20 V，单N通道，增强模式，SO-8封装的功率MOSFET)
Power MOSFET -10 Amps, -20 Volts P−Channel Enhancement−Mode Single SO−8 Package
HDTMOS3e Single SO-8
|
ONSEMI[ON Semiconductor]
|
