| PART |
Description |
Maker |
| 1N70-T92-B 1N70-T92-K 1N70L-T92-B 1N70L-T92-K |
1.2 Amps, 700 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| 4N70L-TF1-T 4N70G-TF1-T 4N70L-TF3-T |
4 Amps, 700 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTP85N03 NTB85N03 NTB85N03T4 |
Power MOSFET 85 Amps / 28 Volts
Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|
| NTF3055-100 NTF3055-100T3G |
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V逻辑电平,N通道 SOT-223 封装的功率MOSFET)
Power MOSFET 3.0 Amps 60 Volts N−Channel
|
ON Semiconductor
|
| NTD32N06L NTD32N06LT4 NTD32N06L-1 NTD32N06LT4G NTD |
Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK)
Power MOSFET 32 Amps, 60 Volts, Logic Level(N-Channel DPAK)
Power MOSFET 32 Amps / 60 Volts / Logic Level(N-Channel DPAK)
Power MOSFET 32 Amps, 60 Volts, Logic Level N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| MTD3055VL1 MTD3055VLT4 MTD3055VL MTD3055VL-D |
Power MOSFET 12 Amps, 60 Volts 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| MMSF4P01HD-D |
Power MOSFET 4 Amps, 12 Volts P-Channel SO-8
|
ON Semiconductor
|
| UT85N03L-TN3-T UT85N03L-TA3-T UT85N03G-TA3-T UT85N |
85 Amps, 30 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2N7002L-AE2-R 2N7002G-AE2-R |
0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
