| PART |
Description |
Maker |
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| DS1345YL-70 DS1345YL-70-IND DS1345BL-70 DS1345BL-7 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Cypress Semiconductor, Corp.
|
| DS1650Y-70-IND DS1650Y-100-IND DS1650Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Bourns, Inc.
Maxim Integrated Products, Inc.
|
| DS1630Y-70-IND DS1630Y-100-IND DS1630Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Coilcraft, Inc.
Omron Electronics, LLC
|
| DS1235AB-200 DS1235Y-120 DS1235AB-150 DS1235Y-200 |
NVRAM (Battery Based) NVRAM中（基于电池
|
TE Connectivity, Ltd.
|
| DS1250Y-70 DS1250Y-70-IND DS1250Y-100-IND DS1250AB |
NVRAM (Battery Based)
From old datasheet system
NOVRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Dallas Semiconductor Corp
|
| GN01094B |
GaAs IC (with built-in ferroelectric)
|
Panasonic Semiconductor
|
| GN01100B |
GaAs IC (with built-in ferroelectric)
|
Panasonic Semiconductor
|
| MB85R256PFTN MB85R256PF MB85R256 |
Memory FRAM(Ferroelectric Random Access Memory)
|
Fuji Electric
Fujitsu Component Limited.
|
| STK10C68-L45M STK10C68-L55M |
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40Z300MH1E M40Z300MH1F M40Z300MH6E M40Z300MH6F M4 |
5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
