| PART |
Description |
Maker |
| HYS72D128320GBR-7-C HYS72D32300GBR-7-C HYS72D64300 |
256MB - 2GB, 184pin
|
Infineon
|
| M381L6423DTM-LCC_C4 M368L1624DTM M368L1624DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NT256D64S8HA0G-8B NT256D64S8HA0G NT256D64S8HA0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 16Mx8 SDRAM
184pin Two Bank Unbuffered DDR SDRAM MODULE 184pin两个银行无缓冲DDR SDRAM内存模块
|
NANYA
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| W3EG2128M72AFSR265D3XG |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA 2GB 2x128Mx72 ECC的DDR SDRAM的注册，瓦特/锁相环，FBGA封装
|
Murata Manufacturing Co., Ltd.
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W3HG2128M72ACER-AD6 W3HG2128M72ACER403AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP 2GB 2x128Mx72 DDR2 SDRAM的注册，瓦特/锁相环，葡萄多糖
|
Optrex America, Inc.
3M Company
|
| HYS72D256020GR-8-A HYS72D256020GR-7-A HYS72D128020 |
2GB (256Mx72) PC1600 2-bank available 3Q02
2GB (256Mx72) PC2100 2-bank available 3Q02
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 DIMM-184
|
Infineon Technologies AG
|
| ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩
64MB/128MB/256MB/512MB MultiMediaCard?/a>
64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
| ADBDB1608 |
DDR SDRAM 184Pin DIMM
|
A-Data Technology
|
| MPMB62D-68KX3 |
PC-2700 CL2.5 184pin DDR DIMM
|
List of Unclassifed Manufacturers
ETC
|
