| PART |
Description |
Maker |
| WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛?
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛?
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
|
White Electronic Designs Corporation
|
| WS512K32NBV-17H2IE WS512K32NBV-15G2CE WS512K32NBV- |
512Kx32 3.3V SRAM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| EDI8G32512V |
512Kx32 Static RAM CMOS, High Speed Module(512Kx32 高速CMOS静态RAM模块)
|
White Electronic Designs Corporation
|
| WED2DL32512V38BC WED2DL32512V40BI WED2DL32512V40BC |
512Kx32 Synchronous Pipeline Burst SRAM
|
WEDC[White Electronic Designs Corporation]
|
| WEDPS512K32V-XBX WEDPS512K32LV-17BM WEDPS512K32LV- |
512Kx32 SRAM 3.3V MULTI-CHIP PACKAGE
|
WEDC[White Electronic Designs Corporation]
|
| PUMA2S16000M-025 PUMA77S16000M-020 PUMA2S16000I-02 |
15NS, 68 PLCC, IND TEMP(EPLD)
SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC
15NS, 68 PLCC, COM TEMP(EPLD)
SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC
20NS, 44 PLCC, IND TEMP(EPLD)
30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA)
15NS, TQFP, COM TEMP, ROHS-A(EPLD)
20NS, 44 TQFP, COM TEMP(EPLD)
7NS, 44 TQFP, COM TEMP, GREEN(EPLD)
30MHZ, 3.3V, 20 PLCC, IND TEMP(FPGA) 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
|
Intel, Corp.
|
| EDI8L32512V12AC EDI8L32512V17AC EDI8L32512V17AI ED |
512Kx32 SRAM Module.3.3V
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| EDI7F433512V100BNC EDI7F433512V120BNC EDI7F433512V |
512Kx32 FLASH
|
White Electronic Designs Corporation
|
| WF512K32N-90G2LM5A WF512K32N-90H1I5A |
512Kx32 5V FLASH MODULE, SMD 5962-94612
|
White Electronic Design...
White Electronic Designs Corporation
|
| GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
