| PART |
Description |
Maker |
| KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16）的CMOS掩模ROM分位12Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MBM29LV400BC-70PFTN MBM29LV400BC-90PFTN MBM29LV400 |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
IC,EEPROM,FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC
|
SPANSION[SPANSION]
Fujitsu
|
| KM23C4200D |
4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M(256Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT29LV040ANBSP AT29LV040A-15JC AT29LV040A-15TC |
EEPROM|FLASH|512KX8|CMOS|TSSOP|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | TSSOP封装| 32脚|塑料
EEPROM|FLASH|512KX8|CMOS|LDCC|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | LDCC | 32脚|塑料
4M bit, 3-Volt Read and 3-Volt Write Flash
|
Atmel, Corp.
Atmel Corp
|
| HY29F400ABG-90I HY29F400ABG-70I HY29F400ABG-50I HY |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 50 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
http://
|
| HT27C4096 |
CMOS 256Kx16-Bit OTP EPROM
|
holtek
|
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| MX29F004TPC-90 29F004B-90 29F004T-70 29F004B-70 29 |
4M-BIT [512KX8] CMOS FLASH MEMORY
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|
| MX23L4003 23L4003 |
4M-BIT [512Kx8] LOW VOLTAGE OPERATION CMOS MASK ROM
From old datasheet system
|
Macronix 旺宏
|
| KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
