| PART |
Description |
Maker |
| TC58256FTI |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
| TC5816BFT |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM 16兆比特（2米x 8位）的CMOS NAND闪存E2PROM
|
Toshiba Corporation
Toshiba, Corp.
|
| TC58256FT |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| TC58NS256BDC |
256 MBit CMOS NAND EPROM
|
Toshiba
|
| TC581282A TC581282AXB |
128-MBIT (16M 8 BITS) CMOS NAND E2PROM
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58128AFT |
128-MBIT (16M × 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
|
TOSHIBA
|
| CD4023BMS CD4012BMS CD4011BMS FN3079 CD4023B CD401 |
From old datasheet system
CMOS NAND Gates
NAND, 3-Input, Triple, Rad-Hard, CMOS, Logic
NAND, 2-Input, Quad, Rad-Hard, CMOS, Logic
NAND, 4-Input, Dual, Rad-Hard, CMOS, Logic
|
INTERSIL[Intersil Corporation]
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| TC5832DC |
32 MBIT (4M x 8BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TH58512DC |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
