| PART |
Description |
Maker |
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| F061254 F051702 F060600 XF0521P |
LAP PLV10 H GRN GRN (TRANSPARENT LENS)
|
E-SWITCH
|
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Ramtron International Corporation
|
| LTC1286CS8PBF LTC1278CN-4 LTC1276CN LTC1282CJ |
Micropower Sampling 12-Bit A/D Converters In S0-8 Packages; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO8
1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP24
1-CH 12-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, CDIP24
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| M41T81M6 M41T81M6TR M41T81MX6 M41T81MX6T M41T81M6E |
SERIAL ACCESS RTC WITH ALARMS
Serial Access Real-Time Clock with Alarms
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| WE256K8-150CC WE256K8-150CCA WE256K8-150CM WE256K8 |
Access time:150 ns; 512K x 8 CMOS EEPROM module
Access time:200 ns; 512K x 8 CMOS EEPROM module
Access time:250 ns; 512K x 8 CMOS EEPROM module
Access time:300 ns; 512K x 8 CMOS EEPROM module
|
White Electronic Designs
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| MAX1239EEE-T MAX122BEAG MAX122BEAGT MAX1241AESA-T |
2.7V to 3.6V and 4.5V to 5.5V, Low-Power, 4-/12-Channel, 2-Wire Serial, 12-Bit ADCs 12-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO16
500ksps, Sampling, 12-Bit ADC with Track/Hold and Reference 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO24
2.7V, Low-Power, 12-Bit Serial ADCs in 8-Pin SO 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO8
|
Maxim Integrated Products, Inc.
|
| LUCL9311GP0DT L9311 LUCL9311AP-D LUCL9311AP-DT LUC |
Line Interface and Line Access Circuit Full-Feature SLIC with High Longitudinal Balance, Ringing Relay,and GR-909 Test Access
Line Interface and Line Access Circuit Full-Feature SLIC with High Longitudinal Balance/ Ringing Relay/and GR-909 Test Access
|
AGERE[Agere Systems]
|
