| PART |
Description |
Maker |
| HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启
x8/x16 Flash EEPROM x8/x16闪存EEPROM
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company
Atmel, Corp.
AMIC Technology, Corp.
Advanced Micro Devices, Inc.
ATMEL[ATMEL Corporation]
|
| DPZ256X16IH3-17C DPZ256X16IH3-17I DPZ256X16IH3-17B |
x16 Flash EEPROM Module x16闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Power-One, Inc.
AVX, Corp.
Vicor, Corp.
|
| SST39SF010-90-4C-NH SST39SF010-90-4C-PH SST39SF512 |
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 5V PROM, 90 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
128K X 8 FLASH 5V PROM, 90 ns, UUC
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| MB84VD22182EE-90-PBS MB84VD22184EE-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| HY29DS323 HY29DS322 HY29DS323BF-10 HY29DS322BF-12 |
EEPROM EEPROM
32 MEGABIT (4M X 8/2M X16) SUPER-LOW VOLTAGE, DUAL BANK, SIMULTANEOUS READ/WRITE, FLASH MEMORY
|
Hynix Semiconductor, Inc.
|
| MX29F8100MC-12C4 MX29F8100MC-10C4 MX29F8100MC-15C4 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Renesas Electronics, Corp.
|
| LH28F160S3HB-L10 LH28F160S3R-L10 LH28F160S3HD-L10 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| CAT28F102N-90 CAT28F102P-70 CAT28F102P-90 CAT28F10 |
x16 Flash EEPROM x16闪存EEPROM
|
Bourns, Inc.
TE Connectivity, Ltd.
Air Cost Control
|
| DPZ128X16IHY-25B DPZ128X16IHY-25C DPZ128X16IHY-25I |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
Glenair, Inc.
Air Cost Control
Vicor, Corp.
TE Connectivity, Ltd.
HIROSE ELECTRIC Co., Ltd.
L-com, Inc.
|
