| PART |
Description |
Maker |
| KVR400D2N3/1G |
1024MB 400MHz DDR2 Non-ECC CL3 DIMM 1024MB00MHz的DDR2内存非ECC CL3内存
|
Omron Electronics, LLC
|
| KVR133X72RC3L/1024 |
1024MB 133MHz ECC Registered CL3 Low Profile DIMM 1024MB33MHz的ECC的超薄注册CL3内存
|
RIA Connect
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| W3EG72255S-D3 W3EG72255S335JD3XG W3EG72255MS100AJD |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG72256S263AJD3 W3EG72256S-AJD3 |
2GB-256Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
http://
White Electronic Designs Corporation
|
| W3EG72128S-AD4 W3EG72128SXXXD4ISG W3EG72128S202AD4 |
1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG72126S335JD3 W3EG64255MS100JD3GG W3EG64255MS10 |
1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG264M72AFSR335D3XG W3EG264M72AFSR263D3XG W3EG26 |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA
|
WEDC[White Electronic Designs Corporation]
|
| V827332K04S |
2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
