| PART |
Description |
Maker |
| KVR400X72RC3A/512 |
512MB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM (64x4) 512MB400MHz的的DDR ECC的注册CL33-3-3）内存（64x4
|
Powerex, Inc.
|
| W3EG7266S403BD4I W3EG7266S202AD4I W3EG7266S202BD4I |
512MB - 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7264S335AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL
|
White Electronic Design...
|
| KVR400X64C3A KVR400X64C3A512 |
512MB 64M x 64-Bit DDR400 CL3 184-Pin DIMM
|
Electronic Theatre Controls, Inc.
|
| W3EG6462S403D3 |
512MB - 2x32Mx64 DDR SDRAM UNBUFFERED 512MB 2x32Mx64 DDR SDRAM内存缓冲
|
NanoAmp Solutions, Inc.
|
| HYS64D64020GBDL-8-B HYS64D64020GBDL HYS64D64020GBD |
DDR SDRAM Modules - 512Mb (64Mx64) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank, FBGA based
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KVR133X64C3L512 KVR133X64C3L_512 KVR133X64C3L/512 |
512MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
512MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
64M X 8 DDR DRAM, 0.75 ns, PDSO66
512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
| KVR533D2S8F4_512I KVR533D2S8F4 KVR533D2S8F4/512I |
Memory Module Specifications (512MB 64M x 72-BIT PC2-4200 CL4 ECC 240-Pin FBDIMM)
|
List of Unclassifed Manufacturers
ETC
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
