| PART |
Description |
Maker |
| TPS607A E006906 |
PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER
From old datasheet system
|
Toshiba
|
| CPT-230 CPT-230S-V-TD |
Chip Photo-transistor
PHOTO TRANSISTOR DETECTOR
|
CITIZEN ELECTRONICS CO., LTD.
|
| BPT-BP0314 BPT-BP0331 BPT-BP2914 BPT-BP2931 BPT-BP |
Water clear, silicon photo transistor
Black, silicon photo transistor
|
Yellow Stone Corp
|
| TLP535 TLP552 |
GaAs IREO & PHOTO-TRANSISTOR 砷化IREO
GaAs IREO & PHOTO-TRANSISTOR 砷化镓IREO
GaAs IREO & PHOTO-TRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| TLP141G |
Programmable Controllers AC-Output Module Soild State Relay
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
|
Toshiba Semiconductor
STMicroelectronics
|
| LDD-E304NI |
0.30 SEVEN SEGMENT, DUAL DIGIT DISPLAY, 635nm RED CHIPS, GRAY FACE WITH WHITE SEGMENTS, COMMON ANODE, NO CHIPS IN DECIMALS.
|
List of Unclassifed Manufacturers
|
| TLP321 TLP321-2 TLP321-4 |
TOSHIBA Photocoupler GaAs Ired & Photo Transistor
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
Photocoupler GaAs Ired & Photo .Transistor
|
TOSHIBA[Toshiba Semiconductor]
|
| BM-10EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-10EG58MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| TLP629 TLP629-4 TLP629-2 |
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
|
TOSHIBA[Toshiba Semiconductor]
ETC
|
| TLP871 |
PHOTO-INTERRUPTER INFRARED LED PHOTODARLINGTON TRANSISTOR
TOSHIBA PHOTO INTERRUPTER INFRARED LED PHOTODARLINGTON TRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| CL138 |
Photo Transistor
|
Micro Electronics
|
