| PART |
Description |
Maker |
| IRFF9132 IRFF9130 |
Avalanche-Energy-Rated P-Channel Power MOSFETs
|
New Jersey Semi-Conduct...
|
| IRF533 |
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated
|
Harris Corporation
|
| 71M6531D10 71M6532F-IGTR/F 71M6532D |
Energy Meter IC
1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PQFP100
|
Teridian Semiconductor Corporation
MAXIM INTEGRATED PRODUCTS INC
Teridian Semiconductor ...
|
| MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| EM4-DINAV93DXR EM4-DINAV13ADR EM4-DINAV13AOR EM4-D |
Energy Management Energy Meter with plug-in Output Modules
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
List of Unclassifed Man...
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
