| PART |
Description |
Maker |
| EM2H |
10Base-2 Ethernet Transceiver Module with On Board Isolation Transformer & DC/DC Converter(10Base-2 以太网收发器模块（带绝缘变压器和 DC/DC变换器）)
|
LSI Corporation
|
| 0811-1X1T-22 0811-1X1T-12 |
1port.No LEDs.RJ45 10Base - T
1port.No LEDs.RJ45 10Base-T
INTEGRATED CONNECTOR MODULES 10Base-T belMag⑩
|
BEL[Bel Fuse Inc.]
|
| 20PMT04B |
(20PMT04B / 20PMT05B) Single 10Base-T/100Base-TX Transformer Design
|
YCL
|
| LF256D LF357D LF157 LF157D LF157-LF257-LF357 LF157 |
From old datasheet system
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS 宽带单J - FET的运算放大器
Wide Bandwidth Single J-FET Operational Amplifiers(宽带J-FET单运 宽带单的J - FET的运算放大器（宽带的J - FET的单运放
OP-AMP, 6200 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDIP8
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| ML4669CH ML4669CQ ML4669IQ ML4664CQ ML4664 ML4664C |
10BASE-FL to 10BASE-T Converter
|
MICRO-LINEAR[Micro Linear Corporation]
|
| ICS1893BKILF ICS1893BKILFT ICS1893BFILF ICS1893BFI |
3.3-V 10Base-T/100Base-TX Integrated PHYceiver垄芒
3.3-V 10Base-T/100Base-TX Integrated PHYceiver?/a>
|
Integrated Device Technology
|
| D2224UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-7.2V-850MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-7.2V-850MHz,单端)
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| D2221UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
