PART |
Description |
Maker |
MX29F016 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix 旺宏
|
MX29F016TI-90 29F016-12 29F016-90 MX29F016 MX29F01 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
MX29F016TI-90 MX29F016TI-12 29F016-12 29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
http:// Macronix International
|
29F040-90 29F040-55 29F040-70 MX29F040PI-70 MX29F0 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 4分位[512KX8]的CMOS平等部门闪存 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Macronix International Co., Ltd.
|
29F040C-70 29F040C-90 29F040C-55 MX29F040CQI-70G M |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 4分位[12k × 8] CMOS单电5V只等于部门闪
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
KM23C16205DSG |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
UPD4616112F9-B85LX-BC2 UPD4616112F9-B95LX-BC2 UPD4 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
|
UPD4616112F9-BC80-BC2 UPD4616112F9-BC90-BC2 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT 1,600位CMOS移动指明内存100万字6 1M X 16 APPLICATION SPECIFIC SRAM, 90 ns, PBGA48 6 X 8 MM, FBGA-48
|
NEC, Corp. Infineon Technologies AG NEC Corp.
|
UPD4218160G5-60-7JF |
CMOS 16M-Bit DRAM
|
ETC
|
UPD4218160LE-60 |
CMOS 16M-Bit DRAM
|
ETC
|