PART |
Description |
Maker |
IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
|
Electronic Theatre Controls, Inc. SEME-LAB Seme LAB
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IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET(减振钢板基本:- 100V的,身份证(续) 6.1A,Vdgr 0.345V)性(P沟道功率马鞍山场效应管(减振钢板基本 100V的,身份证(续) 6.1AVdgr 0.345V))
|
Seme LAB
|
IRF9530S IRF9530SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited Semelab(Magnatec)
|
AS1390A-BQFT AS1390B AS1390B-BSOT |
High Power Boost Cont rol ler and Buck Conver ter for LED Backl ight
|
ams AG
|
2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix Vishay Intertechnology,Inc.
|
VS-T90RIA100 YA200KT20 T7RYA201KT20 |
SCR PHASE CONT 1000V 90A D-55 T..RIA Series Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A
|
Vishay Semiconductors
|
S3076DI S3076TT S3076 |
IC, S3076TT, CONT CLOCK RECOVERY UNIT MULTI-RATE SONET/SDH CLOCK RECOVERY UNIT
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APPLIEDMICRO INC ETC[ETC] List of Unclassifed Manufacturers
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