| PART |
Description |
Maker |
| GM71C4400CJ-80 GM71C4400CLJ-60 GM71C4400CLJ-70 GM7 |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM 1,048,576字4位的CMOS动态随机存储器
|
LG, Corp.
LG Semicon Co.,Ltd.
|
| GM71C4403E-80 GM71C4403ELJ-80 GM71C4403E-60 GM71C4 |
MC 41C 27#20 14#16 PIN PLUG
MB 41C 27#20 14#16 SKT PLUG
Single Output LDO, 1.0A, Adj.(1.295 to 5.5V), Low Noise, Fast Transient Response 6-SOT-223 -40 to 85
MB 41C 27#20 14#16 PIN PLUG 1,048,576字×位组织
1,048,576 Words x Bit Organization 1,048,576字×位组织
|
LG Corp.
LG, Corp.
|
| HM514400A HM514400AJ-6 HM514400AJ-7 HM514400AJ-8 H |
1,048,576-word x 4-bid DRAM, 70ns
1,048,576-WORD x 4-BIT DYNAMIC RAM
1,048,576-word x 4-bid DRAM, 60ns
1,048,576-word x 4-bid DRAM, 80ns
|
HITACHI[Hitachi Semiconductor]
|
| AK5321024BW |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory 1,048,576 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| AK5322048BW |
1,048,576 Word by 36 Bit CMOS Dynamic Random Access Memory 1,048,576 Word6位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| NM27C010 27C010 |
1,048,576-Bit (128K x 8) High Performance CMOS EPROM 1,048,576位（128K的8）高性能CMOS存储
1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ADR380ART-R2 ADR381ART-R2 ADR381ARTZ-REEL7 ADR380A |
Precision Low-Drift 2.048 V/2.500 V SOT-23 Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.048 V, PDSO3
Precision Low-Drift 2.048 V/2.500 V SOT-23 Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO3
2.048 V and 2.5 V Bandgap Voltage References
2.048 V Bandgap Voltage Reference
|
Analog Devices, Inc.
|
| TC514400AAZL-60 TC514400AJL-60 TC514400APL TC51440 |
60 ns, 4-bit generation dynamic RAM
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位）.0伏的CMOS只，扇区擦除闪存
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| NM27C210 NM27C210QE150 NM27C210QE120 |
1,048,576-Bit (64K x 16) High Performance CMOS EPROM [Life-time buy]
1 /048 /576-Bit (64K x 16) High Performance CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
| MSC2313258A-XXDS2 MSC2313258A-XXBS2 MSC2313258A |
1048576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| GM71C4403DT-80 GM71C4403D GM71C4403D-60 GM71C4403D |
1,048,576 Words x Bit Organization
|
LG[LG Semicon Co.,Ltd.]
|
|
