| PART |
Description |
Maker |
| PST593DM PST592C PST592CM PST591JM PST591H PST591H |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7901D1 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7752 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7301 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7303 with Lead Free Packaging
200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.; A IRFI4020H-117P with Standard Packaging 电压检测器
Voltage Detector 电压检测器
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9956 with Standard Packaging 电压检测器
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9952 with Lead Free Packaging 电压检测器
|
NXP Semiconductors N.V.
Intersil, Corp.
|
| TSC427IJA TSC427EPA MAX626/7/8-TSC426/7/8 MAX626MJ |
IC FLEX 10KA FPGA 100K 240-RQFP
Dual Power MOSFET Drivers
Dual MOSFET Driver
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| HS9-4424BRH-8 HS9-4424BRH-Q HS9-4424RH HS9-4424RH- |
SWITCH SLIDE DPDT RT ANG L=9MM 辐射加固双，非逆变电源的MOSFET驱动
Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers(抗辐射双路同相功率MOSFET驱动
Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
Radiation Hardened Dual/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
| HP4936DY FN4469 HP4936DYT |
5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率MOS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET
5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| STS01DTP0606 STS2DNF30L07 STS2DNF30L_07 STS2DNF30L |
Dual NPN-PNP complementary Bipolar transistor
Dual N-channel 30V - 0.09ohm - 3A SO-8 STripFET TM Power MOSFET
Dual N-channel 30V - 0.09ohm - 3A SO-8 STripFET TM Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| NTMD6N04R2 NTMD6N04R2G |
40V, 6A, Dual S0-8, N-Ch 4.6 A, 40 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
|
ON Semiconductor
|
| APTM10DUM02G |
Dual Common Source MOSFET Power Module 495 A, 100 V, 0.0025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| APTM10DUM05TG10 |
Dual common source MOSFET Power Module 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi Corporation
Microsemi, Corp.
|
| APTM100DUM90G |
Dual Common Source MOSFET Power Module 78 A, 1000 V, 0.105 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IRF9953 IRF9953TR |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=-30V/ Rds(on)=0.25ohm)
|
International Rectifier
|
|
