PART |
Description |
Maker |
MX29F400CBMI-55 MX29F400CTMI-90 MX29F400CTTI-55 MX |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
AM29LV400B-100WAC |
EEPROM,FLASH,256KX16/512KX8,CMOS,BGA,48PIN,PLASTIC From old datasheet system
|
AMD Inc
|
KM23C4200D |
4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M(256Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
BM29F400B |
5-Volt Flash 256Kx16/512Kx8
|
Winbond Electronics
|
K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Surface Mount Resistors Thick Film Chip Resistors 256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
N04L1618C2AB2-70I N04L1618C2A N04L1618C2AB N04L161 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
http:// NANOAMP[NanoAmp Solutions, Inc.]
|
KM6164002A |
256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016 |
256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
N04M163WL1A |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
MX29F004TPC-90 29F004B-90 29F004T-70 29F004B-70 29 |
4M-BIT [512KX8] CMOS FLASH MEMORY 4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|