| PART |
Description |
Maker |
| K7A403609B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7N403601A K7N401801A |
256Kx18-Bit Pipelined NtRAMData Sheet
128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N403601M |
(K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
|
Samsung semiconductor
|
| K7N403601A |
(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
|
Samsung semiconductor
|
| K7P401823M-HC700 K7P401823M K7P40361823M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
256K X 18 STANDARD SRAM, 7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| CY7C1353B-66AC CY7C1353B-66BGC CY7C1353B CY7C1353B |
256Kx18 Flow-Through SRAM with NoBL Architecture
|
http://
CYPRESS[Cypress Semiconductor]
|
| KM736V790 |
128Kx36 Synchronous SRAM
From old datasheet system
|
Samsung
|
| KM736V789 |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水线脉冲静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1353-40AC CY7C1353-66AC |
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 14 ns, PQFP100
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| CY7C1352G-250AXI CY7C1352G CY7C1352G-133AXC CY7C13 |
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
