| PART |
Description |
Maker |
| PIC18F4520TI_SO PIC18F2420TE_PSTQP PIC18F2420TE/PS |
MOSFET N-CH 70V 76A TO-247AD 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技10
CABLE ASSEMBLY; MHV MALE TO SHV PLUG ; 93 OHM, RG62A/U COAX; 12" CABLE LENGTH 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技0
28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技0
MOSFET N-CH 800V 27A TO-264AA
MOSFET N-CH 200V 58A TO-247AD
MOSFET N-CH 200V 120A TO-264AA
ADAPTER BNC R/A FEMALE-MALE
Din Rail; External Width:7.5mm; Length:2m; Body Material:Steel
MOSFET N-CH 70V 110A TO-264AA
MOSFET N-CH 900V 6A TO-247AD
MOSFET N-CH 600V 48A TO-264
MOSFET N-CH 500V 48A TO-264AA
MOSFET N-CH 600V 44A TO-264AA
MOSFET N-CH 100V 180A TO-264AA
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| APT6018LNR |
35 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA TO-264AA, 3 PIN
|
STMicroelectronics N.V.
|
| IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NT |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）|52AA
Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
| IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| SSE90N08-08 |
90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| IXFX24N100 IXFK24N100F IXFK24N100 IXFKB24N100 IXFK |
HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
HiPerRF Power MOSFETs 24 A, 1000 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IRFD9220 |
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-0.56A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
|
IRF[International Rectifier]
|
