| PART |
Description |
Maker |
| MX23L6410YC-10 |
64M-BIT (8M x 8 / 4M x 16) Mask ROM 4M X 16 MASK PROM, 100 ns, PDSO44
|
Macronix International Co., Ltd.
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MX23L6410TC-90 MX23L6410TI-10 MX23L6410YC-10 MX23L |
64M-BIT (8M x 8 / 4M x 16) Mask ROM
|
MCNIX[Macronix International]
|
| MX23L6414XI-90 23L6414-10 23L6414-12 23L6414-90 MX |
64M-BIT MASK ROM
|
MCNIX[Macronix International]
|
| 23L6410A-70 23L6410A-90 |
64M-BIT PAGE MODE MASK ROM
|
Macronix International Co., Ltd.
|
| MX23L6422YC-12 23L6422-11 23L6422-12 MX23L6422 MX2 |
3.3 Volt 64M-BIT (4M x 16 / 2M x 32) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
| 23L6410-10 23L6410-15 23L6410-90 |
64M-BIT (8M x 8 / 4M x 16) Mask ROM 6400位（8米8 / 4米16）掩模ROM
|
Macronix International Co., Ltd.
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 |
(SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
|
Silicon Storage Technology
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
