| PART |
Description |
Maker |
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
Comset Semiconductor
|
| 2SA814 2SA815 |
SILICON PNP EPITAXIAL BASE MESA TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| BCX71G |
PNP Epitaxial Silicon Transistor Collector-base voltage VCBO -45 V
|
TY Semiconductor Co., Ltd
|
| BDX1812 BDX18N |
PNP SILICON TRANSISTOR EPITAXIAL BASE
PNP SILICON TRANSISTOR EPITAXIAL BASE
|
Comset Semiconductor
|
| BD201 BD203 BD204 |
SILCON EPITAXIAL-BASE POWER TRANSITORS
|
Comset Semiconductor
|
| BDS15SMD BDS14 BDS14SMD BDS13SMD BDS15 BDS13 |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BDS17SMD BDS17SMD05 BDS16 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD CERAMIC SURFACE MOUNT PACKAGES
|
Seme LAB
|
| TIP111 TIP110 TIP112 TIP112TU |
NPN Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP147 TIP145 TIP146 TIP147TU TIP146TU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
