| PART |
Description |
Maker |
| FLM1414-8F |
Internally Matched Power GaAs FET
|
Eudyna Devices Inc
|
| FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFK25V4045 MGFK25V404511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC36V7785A |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V7785A |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFK33V4045 MGFK33V404511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V6472A MGFC39V6472A11 |
C band internally matched power GaAs FET
|
http://
|
| MGFC39V3742A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V3742 MGFC40V374211 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
