| PART |
Description |
Maker |
| MX29LV128DBTC-90Q MX29LV128D MX29LV128DBT2I-90Q MX |
128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| MX29LA129ML |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
Macronix International
|
| MX29LA128MBTC-90R MX29LA128MTTC-10 MX29LA128MBTC-1 |
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MX23L12854 |
128M-BIT Low Voltage / Serial Mask ROM Memory with 50MHz SPI Bus Interface
|
Macronix International
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MAX1135BEAP MAX1134 MAX1134BCAP MAX1134BEAP MAX113 |
16-Bit ADCs / 150ksps / 3.3V Single Supply
From old datasheet system
Low-Voltage Adjustable Precision Shunt Regulator 3-SOT-23 0 to 70
16-Bit ADCs, 150ksps, 3.3V Single Supply 1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO20
16-Bit ADCs.150ksps.3.3V Single Supply 150ksps6位ADC.3V单电源供
|
http://
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| HY5V26CF HY5V26CLF |
8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 8M × 16位| 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
Vishay Intertechnology, Inc.
|
| AD5310 AD5310BRM AD5310BRT AD5310BRM-REEL AD5310BR |
2.5 V to 5.5 V/ 230uA/ Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs
2.7 V to 5.5 V, 140 A, Rail-to-Rail Voltage Output 10-Bit DAC
2.7 V to 5.5 V, 140 uA, Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
2.7 V to 5.5 V/ 140 uA/ Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
Lithium Battery; Voltage Rating:3.6V; Battery Terminals:Connector SERIAL INPUT LOADING, 6 us SETTLING TIME, 10-BIT DAC, PDSO8
2.7 V to 5.5 V. 140 uA. Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7伏至5.540微安。轨至轨电压输出10位DAC采用SOT - 23
2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 10-Bit DAC
2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
ANALOG DEVICES INC
AD[Analog Devices]
Analog Devices, Inc.
|
| UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范
|
NEC, Corp.
NEC Corp.
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
