| PART |
Description |
Maker |
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| AT27C256 AT27C256R AT27C256R-12 AT27C256R-12JC AT2 |
256K 32K x 8 OTP CMOS EPROM
256K (128K x 8) OTP CMOS EPROM
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SOIC -40 to 85
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDSO28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TVSOP -40 to 85
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TSSOP -40 to 85
8-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
http://
|
| IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
3.3V, 32K X 8 Static RAM
|
Integrated Device Technology
IDT
|
| IDT71V256S IDT71V256SA15TP IDT71V256SA15PZI IDT71V |
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) 32K X 8 CACHE SRAM, 12 ns, PDSO28
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 29C256 AT29C256-15 AT29C256-70TC AT29C256-90PC AT2 |
256K 32K x 8 5-volt Only CMOS Flash Memory
High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SO -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-PDIP -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125
|
Atmel Corp.
|
| UPD43256B00 UPD43256B-XXL UPD43256B-XXLL UPD43256B |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
32K X 8 STANDARD SRAM, 100 ns, PDSO28
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| A290021TL-90 A29002TL-90 A290021T-70 A290021UV-70 |
70ns 20mA 256K x 8 bit CMOS 5.0volt-only boot sector flash memory
256K X 8 Bit CMOS 5.0 Volt-only Boot Sector Flash Memory
256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
|
AMICC[AMIC Technology]
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
General Semiconductor Inc
|
| LH52256C LH52256CH |
CMOS 256K (32K x 8) Static RAM
|
Sharp Electrionic Compo...
Sharp Electrionic Components
|
| PM29F002T-70JC PM29F002T-90PC PM29F002T-55PC PM29F |
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位56K × 8.0伏，只有闪存的CMOS
2 Megabit (256K X 8) 5.0 Volt-only CMOS Flash Memory 2兆位256K × 8.0伏，只有闪存的CMOS
|
PMC-Sierra, Inc.
|
| IDT71256SA12PZ IDT71256SA12T IDT71256SA12TP IDT712 |
CMOS STATIC RAM 256K (32K x 8-BIT)
|
Integrated Device Technology
IDT
|
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