| PART |
Description |
Maker |
| LT3651-4.1 LT3651IUHE-4.2PBF |
Monolithic 4A High Voltage Monolithic 4A High Voltage
BATTERY CHARGE CONTROLLER, 1100 kHz SWITCHING FREQ-MAX, PQCC36
|
LINEAR TECHNOLOGY CORP
|
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3061 ECN3061SPR ECN3061SP ECN3061SPV |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4105AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3511HMSPBF LT3511HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| NCP105006 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ON Semiconductor
|
| NCP1050 NCP1050PZZZ NCP1050STZZZT3 NCP1051 NCP1051 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ONSEMI[ON Semiconductor]
|
