| PART |
Description |
Maker |
| M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM
(M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
RENESAS[Renesas Electronics Corporation]
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| MSM521218 |
65,536-Word ?18-Bit CMOS STATIC RAM(64k瀛??8浣????AM)
65,536-Word x 18-Bit CMOS STATIC RAM
From old datasheet system
65,536-Word ×18-Bit CMOS STATIC RAM(64k字8位静态RAM) 65,536字18位的CMOS静态RAM4K的字× 18位静态RAM）的
|
OKI SEMICONDUCTOR CO., LTD.
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC55257DFI-70L TC55257DFI-85L TC55257DFTI-70L TC55 |
32,768 WORD x 8 BIT STATIC RAM 32,768字8位静态RAM
32K Word x 8 Static RAM(32Kx 8 静RAM) 32K的字× 8静态RAM2K的字× 8静态RAM）的
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-1 |
From old datasheet system
262144-BIT CMOS STATIC RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
64K x 16 Static RAM
1K x 8 Dual-Port Static RAM
1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| IDT71124 IDT71124S12Y IDT71124S12YI IDT71124S15Y I |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
128K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| MCM67B618B MCM67B618BFN9 |
MCM67B618B 64K X 18 Bit BurstRAM Synchronous Fast Static RAM
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
From old datasheet system
|
Motorola, Inc
|
| K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的）
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
