| PART |
Description |
Maker |
| CY7C1429AV18 CY7C1422AV18 |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构36-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构（2字突发结36 -兆位的DDR - II二氧化硅的SRAM
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构6-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构（2字突发结36 -兆位的DDR - II二氧化硅的SRAM
|
Cypress Semiconductor Corp.
|
| GS82582T20 |
288Mb SigmaDDR-II TM Burst of 2 SRAM
|
GSI Technology
|
| K4C89183AF-GIFB K4C89083AF-ACF5 K4C89083AF-ACF6 K4 |
288Mb x18 Network-DRAM2 Specification
|
SAMSUNG[Samsung semiconductor]
|
| IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| IS49NLC18160 IS49NLC36800 IS49NLC93200 |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| MT49H16M18 MT49H32M9 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| DVJR2225-LF DVJR1.050-LF DVJR4.735-LF DVJR4.750-LF |
SURFACE MOUNT ELECTROLYTIC 105C REDUCED SIZE DVJR
ELECTROLYTIC 105°C REDUCED SIZE
|
Dubilier
|
| CY7C1393AV18-167BZC |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor Corp.
|
| CY7C1524AV18 CY7C1522AV18-278BZC CY7C1524AV18-278B |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1424AV18 CY7C1424AV18-167BZC CY7C1424AV18-300B |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1529AV18 CY7C1529AV18-167BZC CY7C1522AV18 CY7C |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1623KV18 CY7C1623KV18-333BZXC |
144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
