| PART |
Description |
Maker |
| TGF2021-04 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2022-12 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-02 |
DC - 12 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP
Power 15A 140V Discrete NPN
Complementary Silicon Power Transistors
|
ON Semiconductor
|
| TGF4250-SCC |
DC - 10.5 GHz Discrete HFET X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
|
TriQuint Semiconductor, Inc.
|
| OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM523 |
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
100V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SINGLE ISOLATED RECTIFIER IN HERMETIC
200V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
International Rectifier
List of Unclassifed Manufacturers
ETC[ETC]
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| PE6815 PE6815-16 |
2 Watts Low Power Precision WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
| PE6809-16 |
0.5 Watts Low Power Precision WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
