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WMS512K8BV-20E - 20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns

WMS512K8BV-20E_1943522.PDF Datasheet
 
Part No. WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA WMS512K8BV-15DEIE WMS512K8BV-15DEIEA WMS512K8BV-15FEIE WMS512K8BV-15FEIEA WMS512K8BV-17DEIE WMS512K8BV-17DEIEA WMS512K8BV-17FEIE WMS512K8BV-17FEIEA WMS512K8BV-20DEIE WMS512K8BV-20DEIEA WMS512K8BV-20FEIE WMS512K8BV-20FEIEA
Description 20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
File Size 110.13K  /  8 Page  

Maker

White Electronic Designs Corporation

Homepage http://www.whiteedc.com
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 Full text search : 20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns

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JAN1N752CURTR JAN1N752CURTR-1 JAN1N759DUR-1 JAN1N7 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 3.9 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 9.1 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) VOLTAGE REGULATOR DIODE
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 6.2 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
 Microsemi Corporation
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 59 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).
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Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Single Output LDO, 200mA, Adj.(10 to 1.2V), High PSRR, Low Noise 5-SOT-23 -40 to 125 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Single Output LDO, 150mA, Adj.(1.22 to 2.5V), Low Input Voltage Requirement, Low Quiescent Current 5-SOT-23 -40 to 125 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 18 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
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Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
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Single Output LDO, 250mA, Adjustable(1.2 to 9.75V), Low Quiescent Current, Power Good (PG) Output 8-PDIP -40 to 125 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Single Output LDO, 250mA, Adjustable(1.2 to 9.75V), Low Quiescent Current, Power Good (PG) Output 8-SOIC -40 to 125 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Single Output LDO, 250mA, Fixed(3.3V), Low Quiescent Current, Power Good (PG) Output 8-PDIP -40 to 125 14 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Single Output LDO, 250mA, Adjustable(1.2 to 9.75V), Low Quiescent Current, Power Good (PG) Output 8-TSSOP -40 to 125 4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
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Single Output LDO, 250mA, Fixed(5.0V), Low Quiescent Current, Power Good (PG) Output 8-PDIP -40 to 125 18 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Single Output LDO, 250mA, Fixed(2.5V), Low Quiescent Current, Power Good (PG) Output 8-SOIC -55 to 150 8.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
Single Output LDO, 250mA, Fixed(2.5V), Low Quiescent Current, Power Good (PG) Output 8-PDIP -55 to 150 9.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
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Single Output LDO, 150mA, Fixed(1.5V), Low Input Voltage Requirement, Low Quiescent Current 5-SOT-23 -40 to 125
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 MICROSEMI CORP-SCOTTSDALE
UltraVolt, Inc.
Microsemi, Corp.
Microsemi Corporation
 
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