| PART |
Description |
Maker |
| M6MGT647M17AKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| M6MGT331S4BKT M6MGB331S4BKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
|
Vicor, Corp.
|
| S71WS512NB0BAEZZ0 S71WS512NB0BAEZZ2 S71WS512N80BAI |
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt 堆叠式多芯片产品（MCP）的闪存和移动存储芯片的CMOS 1.8伏特
|
Spansion Inc.
Spansion, Inc.
|
| AM50DLI28BG AM50DL128BG |
Am50DL128BG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am50DL128BG -堆叠式多芯片封装（MCP）闪存和SRAM
|
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| UT8SF2M32MSPA UT8SF2M32MSPC |
UT8SF2M32 64Megabit Flow-thru SSRAM
|
Aeroflex Circuit Techno...
|
| WED9LC6416V2012BI WED9LC6416V WED9LC6416V1310BC WE |
128Kx32 SSRAM/4Mx32 SDRAM
|
White Electronic Designs
ETC[ETC]
|
| WED9LC6816V1612BI WED9LC6816V1612BC WED9LC6816V201 |
256Kx32 SSRAM/4Mx32 SDRAM
|
WEDC[White Electronic Designs Corporation]
|
| S72WS-N S72WS512NEG-LY S72WS512NFG-LY S72WS512NFG- |
Based MCP/PoP Products 基于MCP流行产品
Based MCP/PoP Products SPECIALTY MEMORY CIRCUIT, PBGA137
|
Spansion Inc.
Spansion, Inc.
|
| AS5SS128K36DQ-12_XT AS5SS128K36 AS5SS128K36DQ-11_I |
128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT
|
AUSTIN[Austin Semiconductor]
|
| DS42587 AM29DL323D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
