| PART |
Description |
Maker |
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| 1N6642 1N4305 1N4149 1N4449 1N4444 1N4447 1N6638 1 |
COMPUTER DIODE Switching
COMPUTER SWITCHING DIODE
200mA Low Power Switching
|
MICROSEMI CORP-LOWELL
MICROSEMI[Microsemi Corporation]
|
| M1MA142KT1G M1MA141KT1 M1MA142KT1 M1MA141K M1MA142 |
SC-70/SOT-323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
Single Switching Diode
|
ONSEMI[ON Semiconductor]
|
| CPD91V10 |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| CMKD2836 CMKD2838 |
SMD Switching Diode Dual Pair: Common Cathode
SMD Switching Diode Dual Pair: Common Anode
SURFACE MOUNT ULTRAmini DUAL PAIR HIGH SPEED SWITCHING SILICON DIODES
|
Central Semiconductor Corp
|
| SMBD2835 SMBD2836 Q68000-A8436 Q68000-A8547 |
Silicon Switching Diode Array 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
Silicon Switching Diode Array with co...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| CMHD7006 |
SMD Switching Diode Single: High Voltage
SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| MMBD7000 MMBD7000-TP |
225mW 100Volt Dual Switching Diode
DIODE SW DUAL 100V 150MA SOT23 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
