PART |
Description |
Maker |
KMM53216000BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM53232004CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM53616004CK |
16MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
KMM53632000BK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5362000B KMM5362000BG |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
KMM5328004BSWG KMM5328004BSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5364005BSW |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
KMM5321200C2W KMM5321200C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
GMM7321010CNS-6 GMM7321010CNS-8 |
1M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72 1M X 32 EDO DRAM MODULE, 80 ns, SMA72 SIMM-72
|
Switchcraft, Inc.
|
KMM53216004BK KMM53216004BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|