| PART |
Description |
Maker |
| NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效TRANSISITOR
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效应TRANSISITOR
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MMT3823 |
JUNCTION FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| NJ26 |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ26A |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ14AL |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ450 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| IFN5432 IFN5433 IFN5434 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| SMP4341 SMP4340 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
