| PART |
Description |
Maker |
| 1N4793A 1N4815B 1N4800A 1N4815A 1N4794A 1N4805 1N4 |
Diode VAR Cap Single 22V 27pF 2-Pin DO-7
Diode VAR Cap Single 22V 100pF 2-Pin DO-7
Diode VAR Cap Single 17V 100pF 2-Pin DO-7
Diode VAR Cap Single 22V 33pF 2-Pin DO-7
Diode VAR Cap Single 110V 15pF 2-Pin DO-7
Diode VAR Cap Single 99V 18pF 2-Pin DO-7
Diode VAR Cap Single 22V 18pF 2-Pin DO-7
Diode VAR Cap Single 72V 27pF 2-Pin DO-7
Diode VAR Cap Single 28V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 22V 22pF 2-Pin DO-7
Diode VAR Cap Single 22V 47pF 2-Pin DO-7
Diode VAR Cap Single 28V 10pF 2-Pin DO-7
Diode VAR Cap Single 110V 10pF 2-Pin DO-7
Diode VAR Cap Single 28V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 55V 47pF 2-Pin DO-7
Diode VAR Cap Single 33V 68pF 2-Pin DO-7
Diode VAR Cap Single 61V 39pF 2-Pin DO-7
|
New Jersey Semiconductor
|
| 1N5468B 1N5466B 1N5475D 1N5475C 1N5462C 1N5463A 1N |
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
Diode VAR Cap Single 30V 18pF 2-Pin DO-7
Diode VAR Cap Single 30V 82pF 2-Pin DO-7
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 30V 10pF 2-Pin DO-7
Diode VAR Cap Single 30V 20pF 2-Pin DO-7
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 47pF 2-Pin DO-7
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 30V 56pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| CSDZ-10Z-2.1G |
2000 MHz - 2300 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.2 dB INSERTION LOSS-MAX 0.175 X 0.175 INCH, 0.043 HEIGHT, SURFACE MOUNT PACKAGE-4
|
Merrimac Industries, Inc.
|
| NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
| AS3833-ZSOT AS3833-ZTQT |
6 channel high-precision LED cont rol ler for 3D-LCD backl ight with integrated step-up cont rol ler
|
ams AG
|
| TK11042MTL |
ANALOG TEMP SENSOR-VOLTAGE, 1.77-1.81V, RECTANGULAR, SURFACE MOUNT
|
TOKO INC
|
| OP270ARC/883C |
DUAL OP-AMP, 175 uV OFFSET-MAX, 5 MHz BAND WIDTH, CQCC20
|
ANALOG DEVICES INC
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| TK11033MTL_33C TK11033 TK11033M TK11033MTL TK11033 |
TEMPERATURE SENSOR IC ANALOG TEMP SENSOR-VOLTAGE, 1.77-1.81V, RECTANGULAR, SURFACE MOUNT
|
TOKO, Inc.
TOKO Inc.
TOKO[TOKO, Inc]
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| PCN3033-100-JB PCN3033-100-JT PCN3033-100-KB PCN30 |
HIGH SURGE NON-INDUCTIVE COMPOSITION RESISTORS UP TO 400 WATT, 160KV & 150,000 JOULES
|
RCD COMPONENTS INC.
|
