| PART |
Description |
Maker |
| WY128K72V-11G5C WY128K72V-11G5I WY128K72V-11G5M WY |
x72 Selectable Burst Mode SRAM Module x72可选的突发模式的SRAM模块
|
Kingbright, Corp.
|
| IBM11M4735C-70J |
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Electronic Theatre Controls, Inc.
|
| CYM74A430PM-60 CYM74S430PM-60 CYM74S431PM-66 CYM74 |
x64 Interleaved Burst Mode SRAM Module
x64 SRAM Module X64的静态存储器模块
|
Cypress Semiconductor, Corp.
|
| R2A20112DD R2A20112SP |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| IBM11M4720D-60 IBM11M4720D-60J |
x72 Fast Page Mode DRAM Module x72快速页面模式内存模
|
Accutek Microcircuit, Corp.
|
| IBM11M4730H-70 IBM11M4730H-60 |
x72 Fast Page Mode DRAM Module x72快速页面模式内存模
|
International Business Machines, Corp.
|
| LT-74H73H-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver
|
Optoway Technology Inc
|
| LT-74D73D-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver (IEEE 802.3ah-2004 1000BASE PX10)
|
Optoway Technology Inc
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| S71NS-N |
MirrorBit? 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
MirrorBit㈢ 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
|
SPANSION
|
| PCD5041 PCD5041H PCD5041HZ |
DECT burst mode controller
|
NXP Semiconductors
Philips Semiconductors
|
