| PART |
Description |
Maker |
| HMC696LP4E HMC696LP4E08 |
SiGe WIDEBAND DIRECT QUADRATURE MODULATOR, 20 - 2700 MHz
|
Hittite Microwave Corporation
|
| HMC497LP4E HMC497LP409 |
SiGe WIDEBAND DIRECT MODULATOR RFIC, 100 - 4000 MHz
|
Hittite Microwave Corporation
|
| HMC597LP4 HMC597LP4E |
SiGe WIDEBAND DIRECT DEMODULATOR RFIC, 100 - 4000 MHz
|
Hittite Microwave Corporation
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| NBSG16MNR2 NBSG16MN NBSG16BAR2 NBSG16BAEVB NBSG16B |
2.5 V/3.3 V SiGe Differential Receiver/Driver with RSECL Outputs
From old datasheet system
2.5V/3.3V SiGe Differential Receiver/Driver with RSECLOutputs
|
ONSEMI[ON Semiconductor]
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MAX9981 MAX9981EGX-T |
825MHz to 915MHz Dual SiGe High-Linearity Active Mixer
825MHz to 915MHz / Dual SiGe High-Linearity Active Mixer
825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC36
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| T0781 T0781-6C |
1700 - 2300 MHz High Linearity SiGe Active Receiver Mixer RF/MICROWAVE DOWN CONVERTER
1700-2300 MHz high intinerary SiGe active receive mixer
|
Atmel, Corp.
|
| ADCMP582BCP ADCMP580 ADCMP580BCP ADCMP581 ADCMP581 |
Ultrafast SiGe Voltage Comparator w/CML Output Drivers
Ultrafast SiGe Voltage Comparator w/Reduced Swing NECL Output Drivers
|
AD[Analog Devices]
|
| MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http://
NEC[NEC]
NEC Corp.
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
