| PART |
Description |
Maker |
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| 632121-1B-KN |
Illuminated or Non-Illuminated, Silver Plated Butt contacts that handle high
|
Carling Technologies
|
| BAS116 |
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us
|
TY Semiconductor Co., Ltd
|
| 1SS190 |
Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Small Total Capacitance :CT = 2.2pF(Typ.)
|
TY Semiconductor Co., Ltd
|
| TLSU1002AT02 TLGU1002AT02 TLPGU1002AT02 EA09751 TL |
TOSHIBA LED lamp. Color amber. Peak emission wavelength(typ) @20mA 596 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
TOSHIBA LED lamp. Color yellow. Peak emission wavelength(typ) @20mA 590 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
LED LAMP PANEL CIRCUIT INDICATOR
From old datasheet system
TOSHIBA LED lamp. Color pure-green. Peak emission wavelength(typ) @20mA 562 nm. Luminous intensity @20mA 1.53(min), 6(typ) mcd.
TOSHIBA LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
|
TOSHIBA[Toshiba Semiconductor]
Marktech Optoelectronics
|
| TDA4810 |
SYNC PROCESSOR AND HORIZONTAL DRIVE FOR MONITORS HORIZONTAL DEFLECTION IC, PDIP20
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
