| PART |
Description |
Maker |
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| NGA-589 |
MICROWAVE/MILLIMETERWAVEAMPLIFIER|GAAS|TO-243|3PIN|PLASTIC
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
|
Electronic Theatre Controls, Inc.
Sirenza Microdevices, Inc.
|
| Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LD271 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor Group
|
| SFH405 Q62702-P835 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PD-8150-100 |
GaAs PIN PHOTODIODES PIN Photodiode with Mini-Size TO Package GaAs PIN型光电二极管PIN光电二极管的迷你尺寸，包
|
Optoway Technology, Inc.
|
| MRFIC1813 |
1.9GHz GaAs Upconverter(1.9GHz GaAs 上转换器)
1.9 GHz UPMIXER AND EXCITER AMPLIFIER
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
