| PART |
Description |
Maker |
| MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器) 64K的18.3V的I / O的流水线，SCD的SyncBurst的SRAM兆，3.3V的输输出，流水线式，单循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
|
| MT58L64L32F |
2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through
|
MICRON
|
| MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| MT58L128L32D1 |
128K x 32锛?.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb锛?.3V杈??/杈??锛??姘寸嚎寮????惊???娑???╋??????????瀛???ī
|
Micron Technology, Inc.
|
| MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8MB的：12k × 1856 × 32/36 3.3V的I / O的流水线，双氰胺SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| R1LV1616RSD-8SW R1LV1616R R1LV1616RBG-7SI R1LV1616 |
16Mb superSRAM (1M wordx16bit)
Memory>Low Power SRAM
|
http://
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| N16L163WC2CZ1-55IL N16L163WC2C N16L163WC2CT1 N16L1 |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 16 bit
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| KMM53616000CK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
| IC61SP12836 IC61SP12832 IC61SP12832-166B IC61SP128 |
100MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM
128K x 32 Pipelined SyncBurst SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| BC369-10 |
16Mb EDO/FPM - OBSOLETE 晶体
|
SIEMENS AG
|
| IS41C44002C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
