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FQU9N08 - 80V N-Channel MOSFET(漏源电压0V、漏电流.4A的N沟道增强型MOS场效应管)

FQU9N08_2044271.PDF Datasheet

Part No.

FQU9N08

Description

80V N-Channel MOSFET(漏源电压0V、漏电流.4A的N沟道增强型MOS场效应管)

File Size

595.43K / 9 Page

Maker

Fairchild Semiconductor Corporation

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Part: FQU11P06

Maker: FAIRCHIL..

Pack: TO-251

Stock: Reserved

Unit price for :

50: $0.23

100: $0.22

1000: $0.21

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Product Description search : 80V N-Channel MOSFET(漏源电压0V、漏电流.4A的N沟道增强型MOS场效应管)

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IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 5A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 5A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 5A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 31A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 6A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 8A I(D) \| TO-205AF 晶体管\| MOSFET的\| N沟道\| 80V的五（巴西）直\| 8A条（丁）\|05AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 4.9A I(D) \| TO-220AB 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）直\| 4.9AI（四）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 1A I(D) \| TO-250VAR 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）直\| 1A条（丁）\|50VAR TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 28A I(D) \| TO-204AE 晶体管\| MOSFET的\| N沟道\| 80V的五（巴西）直\| 28A条（丁）\|04AE TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 600MA I(D) \| TO-250VAR 晶体管\| MOSFET的\| N沟道\| 150伏五（巴西）直\| 600毫安（丁）\|50VAR TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-204AE 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）直\|5A条（丁）\|04AE	Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
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