| PART |
Description |
Maker |
| KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
| KMM53632000CK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
| DS1270W |
3.3V 16Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Dallas Semiconducotr
|
| K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4 |
16Mb H-die SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 |
16M SDRAM
16Mb Synchronous DRAM
|
Hynix Semiconductor
|
| IS41C44002C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| IS42S16100E-6TL IS42S16100E-6BLI IS42S16100E-6TLI |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| M29W128FH M29W128FH60N6E M29W128FH60N6F M29W128FH6 |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| HFDOM44S3V HFDOM44S3VXXX DOM44S3V016 DOM44S3V032 D |
44Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L0R8000B0ZAQF |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| HFDOM44MVX HFDOM44MVXXX DOM44MV016 DOM44MV032 DOM4 |
44Pin Disk On Module Min.16MB ~ Max.1.5GB, True IDE Interface Mode, 3.3V / 5.0V Operating
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
