PART |
Description |
Maker |
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
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Turbo IC
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28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
22CV10AZ-25 PEEL22CV10AZT-25 PEEL22CV10AZP-25 PEEL |
CMOS Programmable Electrically Erasable Logic Device
|
List of Unclassifed Manufacturers ETC
|
HN27C64FP |
8192-WORD X 8BIR ONE TIME ELECTRICALLY PROGRAMMABLE CMOS ROM
|
Hitachi Semiconductor
|
HN58C65FP-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
|
http://
|
HN58C65 HN58C65FP-25 HN58C65P-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
|
HITACHI[Hitachi Semiconductor]
|
24C08 |
CMOS IC 2-WIRE BUS 8K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 1K X 8 BIT EEPROM
|
List of Unclassifed Manufacturers ETC Electronic Theatre Controls, Inc.
|
PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array 15ns programmable electrically erasable logic array Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
|
ICT Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers http://
|
24C02 24C01 |
CMOS I2C 2-WIRE BUS 1K/2K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 128/256 X 8 BIT EEPROM
|
List of Unclassifed Manufacturers ETC
|
BR93L56 |
128 X 16 bIT Electrically Erasable Programmable ROM
|
ROHM[Rohm]
|
AT25128B-XHL-B AT25128B-SSHL-B AT25128B-SSHL-T AT2 |
serial electrically-erasable programmable read only memory
|
ATMEL Corporation http://
|