| PART |
Description |
Maker |
| 7MBP200RA060 |
IGBT-IPM(600V/200A)
|
FUJI[Fuji Electric]
|
| PBMB200A6 |
IGBT MODULE H-Bridge 200A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| SIDC81D60E6 |
Diodes - HV Chips - SIDC81D60E6, 600V, 200A
|
Infineon
|
| PDMB200A6 |
IGBT MODULE Dual 200a 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PBMB200E6 |
Full Bridge IGBT Module 200A/600V
|
Nihon Inter Electronics Corporation
|
| MIMMF200S060B MIMMF200S060B2B |
600V 200A FRED Module RoHS Compliant
|
Micross Components
|
| MIMMF200S060DK |
600V 200A FRED Module RoHS Compliant
|
Micross Components
|
| BUK474-200A BUK474-200B |
PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2MBI200N-0 2MBI200N-060-03 |
600V / 200A 2 in one-package
Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin
|
http://
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| BUK438W-800A BUK438-800A BUK438-800B BUK438W-800B |
RECTIFIER BRIDGE 8A 100V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
RECTIFIER BRIDGE 8A 200V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
PowerMOS transistor
|
NXP Semiconductors
Philips Semiconductors
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
