| PART |
Description |
Maker |
| GS8170DW36 GS8170DW72 |
18Mb Common I/O DW SigmaRAMs
|
GSI Technology
|
| GS8160Z36T-250I GS8160Z18T GS8160Z18T-133 GS8160Z1 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160Z18CGT-250I GS8160Z18CGT-333 GS8160Z18CT GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| GS8170LW36C-333 GS8170LW36C-250 GS8170LW36C-250I G |
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
250MHz 256K x 72 18MB double late write sigmaRAM SRAM
300MHz 1M x 18 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| IDT71P79804 IDTIDT71P79104250BQI IDTIDT71P79104267 |
18Mb Pipelined DDR垄芒II SIO SRAM Burst of 2
18Mb Pipelined DDR?II SIO SRAM Burst of 2
|
Integrated Device Technology
|
| GS8170LW36AC-300I GS8170LW72AC-300 GS8170LW36AC-33 |
512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb ??x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| GS8160F18T-6.5I GS8160F18T-6 GS8160F18T-7 GS8160F1 |
18Mb Burst SRAMs
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| OM100Q05CB OM100Q80XX OM100Q05DB OM100Q05RB OM100Q |
50 A, SILICON, RECTIFIER DIODE
600V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
300V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
700V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
500V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
400V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
200V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
150V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
800V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100 AMP ULTRA FAST CENTER-TAP IN HERMETIC ISOLATED POWER BLOCK PACKAGE
|
International Rectifier
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
http://
|
| GS8161ZV36C GS8161ZV18C |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8160ZV18C |
18Mb Burst SRAMs
|
GSI Technology
|
