| PART |
Description |
Maker |
| K7Z167288B K7Z163688B |
512Kx36 & 256Kx72 DLW(Double Late Write) RAM
|
Samsung semiconductor
|
| GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI Technology
|
| MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| GS8170DW72C-333I GS8170DW36C GS8170DW36C-200 GS817 |
18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
| GS8170DW72AC-300I GS8170DW36AC-300I GS8170DW36AC-2 |
512K X 36 STANDARD SRAM, 1.6 ns, PBGA209
18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI Technology
|
| MCM69R738AZP7R MCM69R738AZP5 MCM69R738A MCM69R738A |
4M Late Write 2.5 V I/O
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| HM64YGB36100 HM64YGB36100BP-33 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
| CXK77B1840GB |
4Mb Late Write HSTL High Speed Synchronous SRAM (256K x 18 Organization)
From old datasheet system
|
Sony
|
| CXK77B1840AGB CXK77B3640AGB |
4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
|
Sony
|
| GS8330LW36C-250 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb Common I/O SigmaRAMs
36Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|
