| PART |
Description |
Maker |
| MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
16M X 16 DDR DRAM, 0.7 ns, PBGA60
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
512Mb: x4, x8, x16 DDR SDRAM Features
128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4X51323PC-7EC30 K4X51323PC-8EC30 |
16M X 32 DDR DRAM, 6 ns, PBGA90 FBGA-90
16M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
|
Applied Micro Circuits, Corp.
|
| AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219
16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| HY5DU28822LT-H |
16M X 8 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| W3E16M72SR-250BC W3E16M72SR-225BM |
16M X 72 DDR DRAM, 0.75 ns, PBGA219
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| HY5MS7B2BLFP-6 |
16M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| A48P4616 |
16M X 16 Bit DDR DRAM
|
AMICC[AMIC Technology]
|
| HYI25DC256160CE-5 HYI25DC256800CE-6 HYI25DC256160C |
16M X 16 DDR DRAM, 0.5 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
32M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
16M X 16 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
|
Qimonda AG
|
|
